摘要 |
A storage element includes: a storage layer which has magnetization perpendicular to a film surface, the direction of the magnetization being changed in accordance with information; a magnetization fixed layer which has magnetization perpendicular to a film surface used as a base of information stored in the storage layer; and an insulating layer of a nonmagnetic substance provided between the storage layer and the magnetization fixed layer. In the storage element described above, the magnetization of the storage layer is reversed using a spin torque magnetization reversal generated by a current flowing in a lamination direction of a layer structure including the storage layer, the insulating layer, and the magnetization fixed layer to store information, and the storage layer has a laminate structure including a magnetic layer and a conductive oxide. |
主权项 |
1. A storage element comprising:
a storage layer having a direction of magnetization extending perpendicular to a film surface, the direction of the magnetization of the storage layer operable to change based on information; a magnetization fixed layer having a direction of magnetization extending perpendicular to the film surface, the magnetization fixed layer configured for use as a base of information stored in the storage layer; and an insulating layer of a nonmagnetic substance between the storage layer and the magnetization fixed layer, wherein,
the magnetization of the storage layer is operable to be reversed using a spin torque magnetization reversal generated by a plurality of wires,the plurality of wires are operable to cooperatively deliver a current flowing in a lamination direction of a layer structure including the storage layer, the insulating layer, and the magnetization fixed layer to store information,at least one of the plurality of wires is operable to control a current flowing between a source and a drain arranged on opposite ends of the at least one of the plurality of wires,the storage layer has a laminate structure including a magnetic layer in-between conductive oxide layers, andat least one of the conductive oxide layers contains at least one selected from the group consisting of ReO3, SnO2, CoTiO, LiTi2O4, LiV2O4, and Fe3O4. |