发明名称 Storage element having laminated storage layer including magnetic layer and conductive oxide and storage device including the storage element
摘要 A storage element includes: a storage layer which has magnetization perpendicular to a film surface, the direction of the magnetization being changed in accordance with information; a magnetization fixed layer which has magnetization perpendicular to a film surface used as a base of information stored in the storage layer; and an insulating layer of a nonmagnetic substance provided between the storage layer and the magnetization fixed layer. In the storage element described above, the magnetization of the storage layer is reversed using a spin torque magnetization reversal generated by a current flowing in a lamination direction of a layer structure including the storage layer, the insulating layer, and the magnetization fixed layer to store information, and the storage layer has a laminate structure including a magnetic layer and a conductive oxide.
申请公布号 US9147455(B2) 申请公布日期 2015.09.29
申请号 US201113334351 申请日期 2011.12.22
申请人 SONY CORPORATION 发明人 Bessho Kazuhiro;Hosomi Masanori;Ohmori Hiroyuki;Higo Yutaka;Yamane Kazutaka;Uchida Hiroyuki;Asayama Tetsuya
分类号 H01L29/82;G11C11/16 主分类号 H01L29/82
代理机构 Dentons US LLP 代理人 Dentons US LLP
主权项 1. A storage element comprising: a storage layer having a direction of magnetization extending perpendicular to a film surface, the direction of the magnetization of the storage layer operable to change based on information; a magnetization fixed layer having a direction of magnetization extending perpendicular to the film surface, the magnetization fixed layer configured for use as a base of information stored in the storage layer; and an insulating layer of a nonmagnetic substance between the storage layer and the magnetization fixed layer, wherein, the magnetization of the storage layer is operable to be reversed using a spin torque magnetization reversal generated by a plurality of wires,the plurality of wires are operable to cooperatively deliver a current flowing in a lamination direction of a layer structure including the storage layer, the insulating layer, and the magnetization fixed layer to store information,at least one of the plurality of wires is operable to control a current flowing between a source and a drain arranged on opposite ends of the at least one of the plurality of wires,the storage layer has a laminate structure including a magnetic layer in-between conductive oxide layers, andat least one of the conductive oxide layers contains at least one selected from the group consisting of ReO3, SnO2, CoTiO, LiTi2O4, LiV2O4, and Fe3O4.
地址 Tokyo JP