Solder bump structure with enhanced high temperature aging reliability and method for manufacturing same

摘要

Implementations described herein generally relate to chip packaging, and in particular, to solder bump structures for a semiconductor device and methods of fabricating the same. In one implementation, a solder bump assembly is provided. The solder bump assembly comprises a conductive bond pad formed on a substrate. A conductive pillar is formed on the conductive bond pad. A plating layer is formed on the conductive pillar, wherein the plating layer comprises copper and nickel. A solder bump is formed on the plating layer in electrical communication with the plating layer. The plating layer may be a bi-layer structure comprising a nickel layer formed on the conductive pillar and a copper layer formed on the nickel layer in electrical communication with the solder bump. The plating layer may be a copper-nickel alloy.

主权项

1. A solder bump connection, comprising:
a conductive bond pad formed on a substrate; a first conductive pillar formed over the conductive bond pad; a first plating layer formed on the first conductive pillar, wherein the first plating layer comprises copper and nickel; a solder bump structure formed on the first plating layer in electrical communication with the first plating layer; a second plating layer contacting the solder bump structure, wherein the second plating layer comprises copper and nickel; and a second conductive pillar contacting the second plating layer.