Methods of forming replacement spacer structures on semiconductor devices

摘要

One illustrative method disclosed herein includes removing the sidewall spacers and a gate cap layer so as to thereby expose an upper surface and sidewalls of a sacrificial gate structure, forming an etch stop layer above source/drain regions of a device and on the sidewalls and upper surface of the sacrificial gate structure, forming a first layer of insulating material above the etch stop layer, removing the sacrificial gate structure so as to define a replacement gate cavity that is laterally defined by portions of the etch stop layer, forming a replacement gate structure in the replacement gate cavity, and forming a second gate cap layer above the replacement gate structure.

主权项

1. A method of forming a transistor device, comprising:
forming a structure above a semiconductor substrate, said structure comprising a sacrificial gate structure, a first gate cap layer positioned above said sacrificial gate structure and first sidewall spacers positioned adjacent said sacrificial gate structure; performing at least one etching process to remove said first sidewall spacers and said first gate cap layer so as to thereby expose an upper surface and sidewalls of said sacrificial gate structure; forming an etch stop layer above source/drain regions of said device and on said sidewalls and said upper surface of said sacrificial gate structure; forming a first layer of insulating material above said etch stop layer; removing said sacrificial gate structure so as to define a replacement gate cavity that is laterally defined by portions of said etch stop layer; forming a replacement gate structure in said replacement gate cavity; forming a second gate cap layer above said replacement gate structure; forming a first contact opening that extends through at least said first layer of insulating material so as to thereby expose at least a portion of said etch stop layer positioned on the sidewall of said replacement gate structure; performing an isotropic etching process to clear said sidewall of said replacement gate structure of said etch stop layer; after performing said isotropic etching process, forming a spacer in said first contact opening; and forming a first conductive contact in said first contact opening.