Nonvolatile memory device and driving method thereof

摘要

According to example embodiments, a nonvolatile memory device includes a plurality of strings having a plurality of serially-connected selection transistors and a plurality of memory cells connected in series to one end of the serially-connected selection transistors. A control logic is configured to perform a program operation for setting a threshold voltage of at least one of the serially-connected selection transistors.

主权项

1. A nonvolatile memory device, comprising:
a plurality of strings, each one of the plurality of strings including a plurality of serially-connected selection transistors and a plurality of memory cells connected in series to one end of the plurality of serially-connected selection transistors, the plurality of memory cells being stacked vertically on top of each other, the serially-connected selection transistors including,
a first string selection transistor connected to a bit line and programmed to have a first threshold voltage, anda second string selection transistor connected between the first string selection transistor and the one end of the plurality of serially-connected selection transistors, the second string selection transistor being programmed to have a second threshold voltage; and a control logic configured to perform a program operation for setting a threshold voltage of at least one of the plurality of serially-connected selection transistors.