发明名称 |
Image sensor, configured to regulate a quantity of light absorbed thereby, electronic device including the same, and image sensing method |
摘要 |
An image sensor and an image sensing method are provided. The image sensor includes a semiconductor substrate; a photoelectric converter comprising a bias unit, which comprises a first electrode and a second electrode, and an organic photoelectric conversion layer, which selectively absorbs light and converts the light into electrons; a via contacting the second electrode to connect the photoelectric converter with the semiconductor substrate; a storage node configured to store electrons; a read-out unit to converts charge transferred from the storage node into an image signal; a pixel array comprising a plurality of pixels, each of which comprises an intermediate insulating layer; and an output circuit configured to read out the image signal from the pixel array. The quantity of light received by the organic photoelectric conversion layer is adjusted by a bias change of the bias unit. |
申请公布号 |
US9148599(B2) |
申请公布日期 |
2015.09.29 |
申请号 |
US201414579857 |
申请日期 |
2014.12.22 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Sul Sang Chul;Goto Hirosige;Lee Kyung Ho |
分类号 |
H04N5/3745;H04N5/378 |
主分类号 |
H04N5/3745 |
代理机构 |
Harness, Dickey & Pierce, P.L.C. |
代理人 |
Harness, Dickey & Pierce, P.L.C. |
主权项 |
1. An image sensor comprising:
a semiconductor substrate; a photoelectric converter including,
a bias unit including a first electrode and a second electrode that are formed separate from each other on the semiconductor substrate, andan organic photoelectric conversion layer configured to selectively absorb a quantity of light in a visible wavelength range and convert the light into charges through photoelectric conversion, the quantity of light absorbed being adjusted by a bias change of the bias unit; a via contacting the second electrode to connect the photoelectric converter with the semiconductor substrate; a storage node configured to store the charges; and a read-out unit formed within the semiconductor substrate configured to convert the charges transferred from the storage node into an image signal; wherein the bias unit further includes,
a third electrode provided parallel to the first electrode, the third electrode separated from the first electrode and the second electrode, the third electrode configured to receive a separate voltage, andan insulation layer provided between the third electrode and the organic photoelectric conversion layer. |
地址 |
Gyeonggi-do KR |