发明名称 Image sensor, configured to regulate a quantity of light absorbed thereby, electronic device including the same, and image sensing method
摘要 An image sensor and an image sensing method are provided. The image sensor includes a semiconductor substrate; a photoelectric converter comprising a bias unit, which comprises a first electrode and a second electrode, and an organic photoelectric conversion layer, which selectively absorbs light and converts the light into electrons; a via contacting the second electrode to connect the photoelectric converter with the semiconductor substrate; a storage node configured to store electrons; a read-out unit to converts charge transferred from the storage node into an image signal; a pixel array comprising a plurality of pixels, each of which comprises an intermediate insulating layer; and an output circuit configured to read out the image signal from the pixel array. The quantity of light received by the organic photoelectric conversion layer is adjusted by a bias change of the bias unit.
申请公布号 US9148599(B2) 申请公布日期 2015.09.29
申请号 US201414579857 申请日期 2014.12.22
申请人 Samsung Electronics Co., Ltd. 发明人 Sul Sang Chul;Goto Hirosige;Lee Kyung Ho
分类号 H04N5/3745;H04N5/378 主分类号 H04N5/3745
代理机构 Harness, Dickey & Pierce, P.L.C. 代理人 Harness, Dickey & Pierce, P.L.C.
主权项 1. An image sensor comprising: a semiconductor substrate; a photoelectric converter including, a bias unit including a first electrode and a second electrode that are formed separate from each other on the semiconductor substrate, andan organic photoelectric conversion layer configured to selectively absorb a quantity of light in a visible wavelength range and convert the light into charges through photoelectric conversion, the quantity of light absorbed being adjusted by a bias change of the bias unit; a via contacting the second electrode to connect the photoelectric converter with the semiconductor substrate; a storage node configured to store the charges; and a read-out unit formed within the semiconductor substrate configured to convert the charges transferred from the storage node into an image signal; wherein the bias unit further includes, a third electrode provided parallel to the first electrode, the third electrode separated from the first electrode and the second electrode, the third electrode configured to receive a separate voltage, andan insulation layer provided between the third electrode and the organic photoelectric conversion layer.
地址 Gyeonggi-do KR