发明名称 |
Production method of an aluminum based group III nitride single crystal |
摘要 |
A production method of aluminum based group III nitride single crystal includes a reaction step, wherein a halogenated gas and an aluminum contact at 300° C. or more to 700° C. or less, producing a mixed gas including an aluminum trihalide gas and an aluminum monohalide gas; a converting step, wherein the aluminum monohalide gas is converted to a solid by setting a temperature of the mixed gas equal to or higher than a temperature to which a solid aluminum trihalide deposit, and lower by 50° C. or more than a temperature to which halogenated gas and aluminum contact in the reaction step; a separation step, wherein the aluminum trihalide gas is removed; and a crystal growth step, wherein the aluminum trihalide gas is used for an aluminum based group III nitride single crystal raw material, keeping its temperature equal to or higher than a temperature of the converting step. |
申请公布号 |
US9145621(B2) |
申请公布日期 |
2015.09.29 |
申请号 |
US201113820530 |
申请日期 |
2011.12.15 |
申请人 |
Tokuyama Corporation |
发明人 |
Nagashima Toru;Hironaka Keiichiro |
分类号 |
C30B29/38;C30B25/10;C30B29/40;C01F7/56;C01F7/58;C30B25/00;C30B35/00;H01L21/02 |
主分类号 |
C30B29/38 |
代理机构 |
Cahn & Samuels, LLP |
代理人 |
Cahn & Samuels, LLP |
主权项 |
1. A production method of aluminum based group III nitride single crystal, comprising:
a reaction step, wherein a halogenated gas and an aluminum are made contact at a temperature of 300° C. or more to 700° C. or less, and a mixed gas including an aluminum trihalide gas and an aluminum monohalide gas is produced, a converting step, wherein the aluminum monohalide gas in the mixed gas is converted to a solid substance by setting a temperature of the mixed gas equal to or higher than a temperature to which a solid aluminum trihalide deposit, and lower by 50° C. or more than a temperature to which the halogenated gas and the aluminum contact in the reaction step, a separation step, wherein the aluminum trihalide gas is taken out by separating the solid substance and the gas, and a crystal growth step, wherein the aluminum trihalide gas is used for a raw material of aluminum based group III nitride single crystal without lowering its temperature and keeping the temperature equal to or higher than a temperature of the converting step. |
地址 |
Yamaguchi JP |