| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a display device that can suppress off-state current of a semiconductor device and operate stably.SOLUTION: A thin film transistor has a semiconductor layer SC having a first channel region SCC, a source region SCS, a drain region SCD, a first boundary region SD1 between the channel region and the source region, and a second boundary region S between the channel region and the drain region, a light shielding layer SL2 confronting the semiconductor layer through a first insulating layer 11, a gate electrode GE confronting the channel region through a second insulating layer 12, a source electrode SE and a drain electrode DE. The light shielding layer is disposed to confront the channel region, the first boundary region, the second boundary region, the end portion at the first boundary region side of the source region and the end portion at the second boundary region side of the drain region. In the light shielding layer, a first area of a first overlap region which is overlapped with the first boundary region and the end portion of the source region is larger than a second area of a second overlap region which is overlapped with the second boundary region and the end portion of the drain region.</p> |
