SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS, PROGRAM AND STORAGE MEDIUM

摘要

PROBLEM TO BE SOLVED: To form a film having a high carbon concentration.SOLUTION: A semiconductor device manufacturing method comprises a process of forming a film containing a first element, a second element and carbon on a substrate by non-simultaneously performing predetermined times, a cycle including: a process of forming a first layer containing a first element and carbon by supplying a material gas having a chemical bond of the first element and carbon to the substrate in a processing chamber from a first supply part; and a process of modifying the first layer to form a second layer by supplying a reaction gas containing the second element to the substrate in the processing chamber from a second supply part and supplying an inert gas excited by plasma to the substrate in the processing chamber from a third supply part different from the second supply part.