| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a material in which metal-semiconductor phase transition behavior represented by a light control function is high.SOLUTION: Provided is a metal-semiconductor phase transition material in which a low temperature phase as a semiconductor phase includes VOas an R phase,and further, upon measurement by aθ-2θX-ray diffraction method using CuKαas a radiation source, 2θhas diffraction peaks at the positions within the range of 19.5 to 20°,within the range of 29.5 to 30.2°,within the range of 40.0 to 40.5°,within the range of 46.5 to 47.0° and within the range of 62.0 to 62.5.</p> |
