发明名称 |
SUBSTRATE TREATMENT DEVICE, CEILING PART, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
[Problem] To speedily reduce the internal furnace temperature while increasing temperature uniformity in a substrate surface. [Solution] This invention has: a reaction tube for treating the substrate; a heating unit disposed on the outer periphery of the reaction tube, the heating unit heating the interior of the reaction tube; a heat insulation part disposed on the outer periphery of the heating unit; a plurality of channels provided to the heat insulation part, the channels channeling outside air or a cooling medium; and a ceiling part covering the upper surface of the heat insulation part. The ceiling part has: a first member having formed therein a feed port that communicates with the channels and feeds the outside air or the cooling medium to the channels; and a second member disposed on the first member, a space for channeling the outside air or the cooling medium being formed between the second member and the first member, the second member having formed thereon a partition part for dividing the space into at least two spaces. |
申请公布号 |
WO2015141792(A1) |
申请公布日期 |
2015.09.24 |
申请号 |
WO2015JP58303 |
申请日期 |
2015.03.19 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
TAKEWAKI, MOTOYA;KOSUGI, TETSUYA;UENO, MASAAKI |
分类号 |
H01L21/31;C23C16/44;H01L21/22;H01L21/316 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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