| 发明名称 |
DIFFUSION-CONTROLLED OXYGEN DEPLETION OF SEMICONDUCTOR CONTACT INTERFACE |
| 摘要 |
A device is created by forming a layer of dielectric material on a silicon-containing region of a semiconductor substrate. An opening is created through the layer of dielectric material, the opening having a bottom and exposing the silicon-containing region. A metal stack is formed within the opening. The metal stack includes at least a first metal film on the silicon-containing region and a second gettering metal film on the first metal film. The metal stack is annealed to cause oxygen to migrate from the substrate to the gettering metal film. A first liner is formed within the opening. A fill metal is deposited in the opening. |
| 申请公布号 |
US2015270179(A1) |
申请公布日期 |
2015.09.24 |
| 申请号 |
US201414219208 |
申请日期 |
2014.03.19 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Alptekin Emre;Ozcan Ahmet S.;Sardesai Viraj Y.;Schonenberg Kathryn T.;Tran Cung D. |
| 分类号 |
H01L21/8238;H01L21/285;H01L29/45;H01L21/324 |
主分类号 |
H01L21/8238 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a contact, the method comprising:
forming a layer of dielectric material on a silicon-containing region of a semiconductor substrate; creating an opening through the layer of dielectric material, the opening having a bottom and exposing the silicon-containing region; forming a metal stack within the opening, the metal stack including at least a first metal film on the silicon-containing region and a second metal film on the first metal film; annealing the metal stack to cause oxygen to migrate from the substrate to the second metal film; forming a first liner within the opening; and depositing a fill metal in the opening. |
| 地址 |
Armonk NY US |
