发明名称 半導体装置及びその動作方法
摘要 <p>A semiconductor device, includes first, second, and third switching elements. The third switching element comprises first and second terminals. Each of the first and second switching elements comprise a unified ion conductor, a first electrode disposed to contact the ion conductor and supply metal ions thereto, and a second electrode disposed to contact the ion conductor and is less susceptible to ionization than the first electrode. The first electrodes of the first switching element and the second switching element are electrically connected. The first terminal of the third switching element is electrically connected to only the first electrodes which are electrically connected, or the second electrode of the first switching element and the second electrode of the second switching element are electrically connected. The first terminal of the third switching element is electrically connected to only the second electrodes which are electrically connected.</p>
申请公布号 JP5783174(B2) 申请公布日期 2015.09.24
申请号 JP20120520484 申请日期 2011.06.09
申请人 发明人
分类号 G11C13/00;H01L27/105;H01L45/00;H01L49/00 主分类号 G11C13/00
代理机构 代理人
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