HETEROSTRUCTURE FIELD EFFECT TRANSISTOR HAVING HIGH EFFICIENCY AND METHOD OF PREPARING THE SAME

摘要

A high-efficiency heterojunction filed effect transistor in which a gate electrode area is formed to the direction of a drain electrode on nitride-based buffer layers with a low dislocation density to exhibit a high breakdown voltage, and its preparation method.;The heterojunction field effect transistor according to the present invention minimizes dislocations in a device and provides a high breakdown voltage by forming a gate electrode area to the direction of a drain electrode on the top of the wing area that is on the far side opposite to one that includes the coalescence boundary of the wing area with a lower dislocation density in the buffer layer.

主权项

1. A heterojunction field effect transistor comprising:
an insulating substrate; nitride-based buffer layers, formed on the substrate, that has a wing area with lower dislocation; density and a seed area with a higher dislocation density; a GaN layer formed on the buffer layers; an AlGaN layer formed on the GaN layer; and a source electrode, a drain electrode and a gate electrode between the source and drain electrodes, all of which are formed on the AlGaN, wherein, if applying voltage to the gate electrode aforementioned, a gate electrode area, to which a relatively higher voltage is applied, to the direction of the drain electrode is formed on the top of the wing area that is on the far side opposite to one that includes the coalescence boundary of the wing area aforementioned.