METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method of manufacturing a semiconductor device includes forming, over a semiconductor substrate comprising a first region and a second region, a patterned first film in which an upper face of a portion located over the first region is positioned at a lower height from the semiconductor substrate than an upper face of a portion located over the second region, forming, over the first film, a second film which is an insulating film, a portion of the second film penetrating the first film and being located inside a trench of the semiconductor substrate, and polishing the second film to remove a portion of the second film located over the first film. An occupancy of the trench in the first region is lower than an occupancy of the trench in the second region.

主权项

1. A method of manufacturing a semiconductor device, comprising:
forming, over a semiconductor substrate comprising a first region and a second region, a patterned first film having a first part located over the first region and a second part located over the second region, an upper face of the first part being positioned at a lower height from the semiconductor substrate than an upper face of the second part; forming, over the first film, a second film which is an insulating film, a portion of the second film penetrating the first part and being located inside a trench of the first region, and a portion of the second film penetrating the second part and being located inside a trench of the second region; and polishing the second film to remove a portion of the second film located over the first film, wherein an occupancy of the trench in the first region is lower than an occupancy of the trench in the second region.