SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device that is suitable for miniaturization. A method for manufacturing a semiconductor device includes the steps of forming a semiconductor, forming a first conductor over the semiconductor, performing a second process on the first conductor so as to form a conductor according to a first pattern, forming a first insulator over the conductor having the first pattern, forming an opening in the first insulator, performing a third process on the conductor having the first pattern in the opening so as to form a first electrode and a second electrode and to expose the semiconductor, forming a second insulator over the first insulator, an inner wall of the opening, and an exposed portion of the semiconductor, forming a second conductor over the second insulator, and performing a fourth process on the second conductor so as to form a third electrode.

主权项

1. A semiconductor device comprising:
an island-shaped semiconductor; a first electrode and a second electrode; a first insulator; a second insulator; and a third electrode, wherein the first electrode and the second electrode are on and in contact with the island-shaped semiconductor, wherein the first insulator is over the island-shaped semiconductor, the first electrode, and the second electrode, wherein the first insulator has an opening or a groove overlapping with the island-shaped semiconductor, wherein the second insulator is over the first insulator, an inner wall of the opening or the groove, and an exposed portion of the island-shaped semiconductor, and wherein the third electrode is in the opening or the groove, the second insulator being interposed between the third electrode and each of the island-shaped semiconductor, the first electrode, and the second electrode.