发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device according to an embodiment includes: a first GaN based semiconductor layer; a second GaN based semiconductor layer disposed on the first GaN based semiconductor layer and having a bandgap larger than that of the first GaN based semiconductor layer; a source electrode disposed on the second GaN based semiconductor layer; a drain electrode disposed on the second GaN based semiconductor layer; a p-type third GaN based semiconductor layer disposed between the source electrode and the drain electrode on the second GaN based semiconductor layer; a gate electrode disposed on the third GaN based semiconductor layer; and a p-type fourth GaN based semiconductor layer disposed between the gate electrode and the drain electrode on the second GaN based semiconductor layer and disposed separated from the third GaN based semiconductor layer. |
申请公布号 |
US2015270379(A1) |
申请公布日期 |
2015.09.24 |
申请号 |
US201514657722 |
申请日期 |
2015.03.13 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
KURAGUCHI Masahiko;SAITO Hisashi |
分类号 |
H01L29/778;H01L29/06;H01L29/40 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device, comprising:
a first GaN based semiconductor layer; a second GaN based semiconductor layer disposed on the first GaN based semiconductor layer, the second GaN based semiconductor layer having a bandgap larger than a bandgap of the first GaN; a source electrode disposed on the second GaN based semiconductor layer; a drain electrode disposed on the second GaN based semiconductor layer; a p-type third GaN based semiconductor layer disposed between the source electrode and the drain electrode on the second GaN based semiconductor layer; a gate electrode disposed on the third GaN based semiconductor layer; and a p-type fourth GaN based semiconductor layer disposed between the gate electrode and the drain electrode on the second GaN based semiconductor layer, the fourth GaN based semiconductor layer disposed separated from the third GaN based semiconductor layer. |
地址 |
Minato-ku JP |