发明名称 |
LITHOGRAPHY PROCESS |
摘要 |
A method for being used in a lithography process is provided. The method includes receiving a first mask, a second mask and a substrate with a set of baseline registration marks. A first set of registration marks is formed on the substrate using the first mask and a first exposure tool, and a first set of overlay errors is determined. The first set of registration marks is removed and a second set of registration marks is formed on the substrate using the second mask and a second exposure tool. A second set of overlay errors is determined. A set of tool-induced overlay errors is generated from the first and second sets of overlay errors and used in fabricating a third mask. The third mask can then be used in the lithography process to accommodate the overlay errors caused by different exposure tools, different masks, and different mask writers. |
申请公布号 |
US2015268565(A1) |
申请公布日期 |
2015.09.24 |
申请号 |
US201514733719 |
申请日期 |
2015.06.08 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Yu Shinn-Sheng;Yen Anthony |
分类号 |
G03F7/20;G03F1/42 |
主分类号 |
G03F7/20 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method comprising:
providing a substrate having a set of baseline registration marks; forming a first set of registration marks on the substrate; determining a first set of overlay errors of the first set of registration marks with respect to the set of baseline registration marks; forming a second set of registration marks on the substrate; determining a second set of overlay errors of the second set of registration marks with respect to the set of baseline registration marks; generating a set of tool-induced overlay errors from the first set of overlay errors and the second set of overlay errors; and fabricating a device by using a third mask based on the set of tool-induced overlay errors. |
地址 |
Hsin-Chu TW |