| 摘要 |
A semiconductor light-emitting device has: a semiconductor stacked layer including stacked layers of a first semiconductor layer having a first conductivity type, an active layer, and a second semiconductor layer having a second conductivity type; a second electrode formed on the second semiconductor layer and having a high reflectivity; a recess extending from the surface of the second semiconductor layer into the first semiconductor layer through the second semiconductor layer and the active layer, exposing the semiconductor stacked layers to the side surface, and exposing the first semiconductor layer to the bottom surface; an insulating film having an opening at the bottom surface of the recess and covering the side surface of the recess; a contact region formed by digging down the first semiconductor layer exposed to the opening; a first semiconductor layer side contact electrode forming an electrical contact with the surface of the contact region, creeping up to the upper surface of the insulating film in the vicinity of the opening, and having a smoothly continuous hook portion; and a first semiconductor layer side high-reflectivity electrode having a high reflectivity to the light emitted from the semiconductor stacked layer and extending from above the first semiconductor layer side contact electrode onto the insulating film. |
