发明名称 SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 A solid-state imaging device includes: a light-receiving pixel part configured to be formed on a semiconductor substrate; a black-level reference pixel part configured to be formed on the semiconductor substrate; and a multilayer interconnect part configured to be provided over the semiconductor substrate. The multilayer interconnect part includes an insulating layer formed over the semiconductor substrate and metal interconnect layers formed as a plurality of layers in the insulating layer. The multilayer interconnect part has a first light-blocking film formed above an area between first metal interconnects of a first metal interconnect layer as one of the metal interconnect layers above the black-level reference pixel part, and a second light-blocking film that is connected to the first light-blocking film and is formed of a second metal interconnect layer over the first metal interconnect layer.
申请公布号 US2015270305(A1) 申请公布日期 2015.09.24
申请号 US201514730563 申请日期 2015.06.04
申请人 Sony Corporation 发明人 Hayashi Toshihiko;Kudoh Yoshiharu
分类号 H01L27/146 主分类号 H01L27/146
代理机构 代理人
主权项 1. A solid-state imaging device comprising: a light-receiving pixel part configured to be formed on a semiconductor substrate; a black-level reference pixel part configured to be formed on the semiconductor substrate; and a multilayer interconnect part configured to be provided over the semiconductor substrate including the light-receiving pixel part and the black-level reference pixel part, the multilayer interconnect part including an insulating layer formed over the semiconductor substrate and metal interconnect layers formed as a plurality of layers in the insulating layer, wherein the multilayer interconnect part has a first light-blocking film formed above an area between first metal interconnects of a first metal interconnect layer as one of the metal interconnect layers above the black-level reference pixel part, and a second light-blocking film that is connected to the first light-blocking film and is formed of a second metal interconnect layer over the first metal interconnect layer, and a plurality of light-blocking film groups each composed of the first light-blocking film and the second light-blocking film are formed.
地址 Tokyo JP