发明名称 |
SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A solid-state imaging device includes: a light-receiving pixel part configured to be formed on a semiconductor substrate; a black-level reference pixel part configured to be formed on the semiconductor substrate; and a multilayer interconnect part configured to be provided over the semiconductor substrate. The multilayer interconnect part includes an insulating layer formed over the semiconductor substrate and metal interconnect layers formed as a plurality of layers in the insulating layer. The multilayer interconnect part has a first light-blocking film formed above an area between first metal interconnects of a first metal interconnect layer as one of the metal interconnect layers above the black-level reference pixel part, and a second light-blocking film that is connected to the first light-blocking film and is formed of a second metal interconnect layer over the first metal interconnect layer. |
申请公布号 |
US2015270305(A1) |
申请公布日期 |
2015.09.24 |
申请号 |
US201514730563 |
申请日期 |
2015.06.04 |
申请人 |
Sony Corporation |
发明人 |
Hayashi Toshihiko;Kudoh Yoshiharu |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
1. A solid-state imaging device comprising: a light-receiving pixel part configured to be formed on a semiconductor substrate; a black-level reference pixel part configured to be formed on the semiconductor substrate; and a multilayer interconnect part configured to be provided over the semiconductor substrate including the light-receiving pixel part and the black-level reference pixel part, the multilayer interconnect part including an insulating layer formed over the semiconductor substrate and metal interconnect layers formed as a plurality of layers in the insulating layer, wherein the multilayer interconnect part has a first light-blocking film formed above an area between first metal interconnects of a first metal interconnect layer as one of the metal interconnect layers above the black-level reference pixel part, and a second light-blocking film that is connected to the first light-blocking film and is formed of a second metal interconnect layer over the first metal interconnect layer, and a plurality of light-blocking film groups each composed of the first light-blocking film and the second light-blocking film are formed. |
地址 |
Tokyo JP |