发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A semiconductor memory device includes first and second memory regions configured to store data in a mirrored fashion with respect to each other during a high speed operation period; and a read operation block configured to repeatedly and alternately select the first and second memory regions and read data from a selected memory region, in the case where the first or second memory region is repeatedly selected in read operations of at least two times during the high speed operation period. |
申请公布号 |
US2015269980(A1) |
申请公布日期 |
2015.09.24 |
申请号 |
US201414522345 |
申请日期 |
2014.10.23 |
申请人 |
SK hynix Inc. |
发明人 |
KIM Kwan-Weon |
分类号 |
G11C7/10;G11C7/22 |
主分类号 |
G11C7/10 |
代理机构 |
|
代理人 |
|
主权项 |
1. A semiconductor memory device comprising:
first and second memory regions suitable for storing data in a mirrored fashion with respect to each other during a high speed operation period; and a read operation block suitable for alternately selecting the first and second memory regions and reading data from a selected memory region, when the first or second memory region is repeatedly selected in read operations performed two or more times during the high speed operation period. |
地址 |
Gyeonggi-do KR |