发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 A semiconductor memory device includes first and second memory regions configured to store data in a mirrored fashion with respect to each other during a high speed operation period; and a read operation block configured to repeatedly and alternately select the first and second memory regions and read data from a selected memory region, in the case where the first or second memory region is repeatedly selected in read operations of at least two times during the high speed operation period.
申请公布号 US2015269980(A1) 申请公布日期 2015.09.24
申请号 US201414522345 申请日期 2014.10.23
申请人 SK hynix Inc. 发明人 KIM Kwan-Weon
分类号 G11C7/10;G11C7/22 主分类号 G11C7/10
代理机构 代理人
主权项 1. A semiconductor memory device comprising: first and second memory regions suitable for storing data in a mirrored fashion with respect to each other during a high speed operation period; and a read operation block suitable for alternately selecting the first and second memory regions and reading data from a selected memory region, when the first or second memory region is repeatedly selected in read operations performed two or more times during the high speed operation period.
地址 Gyeonggi-do KR