SEGMENTED NPN VERTICAL BIPOLAR TRANSISTOR

摘要

In described examples, a segmented bipolar transistor (100) includes a p-base in a semiconductor surface (106) including at least one p-base finger (140) having a base metal/silicide stack including a base metal line that contacts a silicide layer (159) on the semiconductor surface of the p-base finger (140). An n+ buried layer (126) is under the p-base. A collector includes an n+ sinker (115) extending from the semiconductor surface to the n+ buried layer (126) including a collector finger having a collector metal/silicide stack including a collector metal line that contacts a silicide layer on the semiconductor surface of the collector finger. An n+ emitter (150) has at least one emitter finger including an emitter metal/silicide stack that contacts the silicide layer (159) on the semiconductor surface of the emitter finger. The emitter metal/silicide stack and/or collector metal/silicide stack include segmentation with a gap (150c), which cuts a metal line and/or the silicide layer of the stack.