发明名称 methods of forming buried microelectricomechanical structures coupled with device substrates and structures formed thereby
摘要 <p>Methods of forming integrated MEMS structures are described. Those methods and structures may include forming at least one MEMS structure on a first substrate, forming a first bonding layer on a top surface of the first substrate, and then coupling the first bonding layer disposed on the first substrate to a second substrate, wherein the second substrate comprises a device layer. The bonding may comprise a layer transfer process, wherein an integrated MEMS device is formed.</p>
申请公布号 GB201514060(D0) 申请公布日期 2015.09.23
申请号 GB20150014060 申请日期 2014.03.13
申请人 INTEL CORPORATION 发明人
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