发明名称 Memory system including nonvolatile memory
摘要 According to one embodiment, a memory system includes a nonvolatile memory and a control circuit. The nonvolatile memory includes a storage area having a plurality of memory cells configured to store data. The control circuit determines whether data write to the storage area is possible or impossible.
申请公布号 US9142300(B2) 申请公布日期 2015.09.22
申请号 US201314104270 申请日期 2013.12.12
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 Tagawa Hiroki;Tsuji Hidetaka
分类号 G11C16/10;G11C16/26 主分类号 G11C16/10
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A memory system comprising: a nonvolatile memory including a plurality of second storage areas including a plurality of first storage areas each having a plurality of memory cells configured to store data; and a control circuit configured to control the nonvolatile memory, wherein each first storage area includes a data portion to store the data and a flag portion to store information representing whether write to the data portion is possible or impossible, each first storage area is a unit of data write, each second storage area is a unit of data erase, the control circuit writes the information to the flag portion of one of the first storage areas and then writes the data to the data portion, and the control circuit reads the information from the flag portion of the one of the first storage areas, and then determines whether write to the one of the first storage areas is possible or impossible based on the read information.
地址 Minato-ku JP