发明名称 SEMICONDUCTOR MEMORY DEVICE ALLOWING EASY CHARACTERISTICS EVALUATION
摘要 A row control circuit includes a selector for outputting, as a signal ZRXTRSTD, either signal INTSIG or ZRXTRST in accordance with a test signal TEST, and a holding circuit for receiving a signal ZRXTS by an input A, receiving the signal ZRXTRSTD by an input B, and outputting a word line activating signal RXT from an output node OUT. In a test mode, the phase relation of a sense amplifier activating signal S0N and the word line active signal RXT is set to be different from that in a normal mode. Consequently, a margin of a timing of reading operation or restoring operation can be evaluated.
申请公布号 US2002176295(A1) 申请公布日期 2002.11.28
申请号 US20010986874 申请日期 2001.11.13
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 TAKATSUKA TAKAFUMI;TSUKUDE MASAKI
分类号 G01R31/28;G01R31/3185;G11C11/401;G11C11/403;G11C11/406;G11C11/407;G11C29/50;(IPC1-7):G11C7/00 主分类号 G01R31/28
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