发明名称 |
Electrode configurations for semiconductor devices |
摘要 |
A III-N semiconductor device can include an electrode-defining layer having a thickness on a surface of a III-N material structure. The electrode-defining layer has a recess with a sidewall, the sidewall comprising a plurality of steps. A portion of the recess distal from the III-N material structure has a first width, and a portion of the recess proximal to the III-N material structure has a second width, the first width being larger than the second width. An electrode is in the recess, the electrode including an extending portion over the sidewall of the recess. A portion of the electrode-defining layer is between the extending portion and the III-N material structure. The sidewall forms an effective angle of about 40 degrees or less relative to the surface of the III-N material structure. |
申请公布号 |
US9142659(B2) |
申请公布日期 |
2015.09.22 |
申请号 |
US201414211104 |
申请日期 |
2014.03.14 |
申请人 |
Transphorm Inc. |
发明人 |
Dora Yuvaraj;Wu Yifeng |
分类号 |
H01L29/872;H01L29/778;H01L29/16;H01L29/20;H01L29/417;H01L29/423;H01L29/66;H01L29/861;H01L21/768;H01L21/283;H01L21/285 |
主分类号 |
H01L29/872 |
代理机构 |
Fish & Richardson P.C. |
代理人 |
Fish & Richardson P.C. |
主权项 |
1. A III-N semiconductor device, comprising:
an electrode-defining layer having a thickness on a surface of a III-N material structure, the electrode-defining layer having a recess with a sidewall, the sidewall comprising a plurality of steps, wherein a portion of the recess distal from the III-N material structure has a first width, and a portion of the recess proximal to the III-N material structure has a second width, the first width being larger than the second width; and an electrode in the recess, the electrode including an extending portion over the sidewall, a portion of the electrode-defining layer being between the extending portion and the III-N material structure; wherein at least one of the steps in the sidewall has a first surface that is substantially parallel to the surface of the III-N material structure and a second surface that is slanted; and the sidewall forms an effective angle of about 40 degrees or less relative to the surface of the III-N material structure. |
地址 |
Goleta CA US |