Group III nitride semiconductor device and method for manufacturing the same

摘要

[Problem] To provide a group III nitride semiconductor device and a method for manufacturing the same in which dislocation density in a semiconductor layer can be precisely reduced.;[Solution] In manufacturing a group III nitride semiconductor device 1, a mask layer 40 is formed on a substrate 20, followed by selectively growing nanocolumns 50 made of a group III nitride semiconductor through a pattern 44 of the mask layer 40 in order to grow a group III nitride semiconductor layer 10 on the mask layer 40.

主权项

1. A group III nitride semiconductor device, comprising:
a substrate comprising SiC; a mask layer formed on the substrate and including a predetermined periodic pattern; nanocolumns selectively grown through the predetermined pattern of the mask layer and comprising a group III nitride semiconductor; and a group III nitride semiconductor layer disposed directly on the mask layer formed on the substrate and grown to be higher than the nanocolumns so as to fill in a gap between the nanocolumns, wherein top surfaces of the nanocolumns are located higher than an upper surface of the mask layer.