发明名称 |
SEMICONDUCTOR ELEMENT HAVING MID-GAP WORK FUNCTION METAL GATE ELECTRODE |
摘要 |
Described is a semiconductor device including middle gap work function metal gate electrodes. The semiconductor device includes a plurality of gate patterns. The gate patterns include different gate electrode metal parts or different gate electrode metal thicknesses. |
申请公布号 |
KR20150106677(A) |
申请公布日期 |
2015.09.22 |
申请号 |
KR20140029052 |
申请日期 |
2014.03.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHEON, KEON YONG;KIM, IL RYONG;KIM, DONG WON |
分类号 |
H01L27/092;H01L29/423;H01L29/78 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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