发明名称 SEMICONDUCTOR ELEMENT HAVING MID-GAP WORK FUNCTION METAL GATE ELECTRODE
摘要 Described is a semiconductor device including middle gap work function metal gate electrodes. The semiconductor device includes a plurality of gate patterns. The gate patterns include different gate electrode metal parts or different gate electrode metal thicknesses.
申请公布号 KR20150106677(A) 申请公布日期 2015.09.22
申请号 KR20140029052 申请日期 2014.03.12
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHEON, KEON YONG;KIM, IL RYONG;KIM, DONG WON
分类号 H01L27/092;H01L29/423;H01L29/78 主分类号 H01L27/092
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