发明名称 MEMS device structure and methods of forming same
摘要 A microelectromechanical system (MEMS) device may include a MEMS structure above a first substrate. The MEMS structure comprising a central static element, a movable element, and an outer static element. A portion of bonding material between the central static element and the first substrate. A second substrate above the MEMS structure, with a portion of a dielectric layer between the central static element and the second substrate. A supporting post comprises the portion of bonding material, the central static element, and the portion of dielectric material.
申请公布号 US9139420(B2) 申请公布日期 2015.09.22
申请号 US201213450223 申请日期 2012.04.18
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Chang Chang-Chia;Fan Chen-Chih;Chou Bruce C. S.
分类号 H01L29/84;B81B7/00;B81C1/00;B81B3/00 主分类号 H01L29/84
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A method of forming a MEMS device comprising: forming an interconnect structure on a first substrate; depositing a dielectric layer on the interconnect structure; patterning the dielectric layer to form a central portion and two outer portions; bonding a MEMS wafer to the patterned dielectric layer; patterning the MEMS wafer to form a movable element, a central static element, and an outer static element, the movable element encircling the central static element, and the outer static element encircling the movable element; depositing a first bonding material on the central static element and the outer static element; forming two recesses in a second substrate, wherein the recesses form a central raised portion of the second substrate and two outer raised portions of the second substrate; depositing a second bonding material on the central raised portion and the outer raised portions of the second substrate; and bonding the MEMS wafer to the second substrate, wherein the central portion of the dielectric layer, the central static element, the first bonding material on the central static element, the second bonding material on the central raised portion, and the central raised portion form a first supporting post.
地址 Hsin-Chu TW