Magnetic tunnel junction and method for fabricating a magnetic tunnel junction

摘要

An improved magnetic tunnel junction device and methods for fabricating the improved magnetic tunnel junction device are provided. The provided two-etch process reduces etching damage and ablated material redeposition. In an example, provided is a method for fabricating a magnetic tunnel junction (MTJ). The method includes forming a buffer layer on a substrate, forming a bottom electrode on the substrate, forming a pin layer on the bottom electrode, forming a barrier layer on the pin layer, and forming a free layer on the barrier layer. A first etching includes etching the free layer, without etching the barrier layer, the pin layer, and the bottom electrode. The method also includes forming a top electrode on the free layer, as well as forming a hardmask layer on the top electrode. A second etching includes etching the hardmask layer; the top electrode layer, the barrier layer, the pin layer, and the bottom electrode.

主权项

1. A method for fabricating a device, comprising:
fabricating a magnetic tunnel junction, including:
forming a bottom electrode on a substrate;forming a pin layer on the bottom electrode;forming a barrier layer on the pin layer;forming a free layer on the barrier layer;etching the free layer, without etching the barrier layer, the pin layer, and the bottom electrode;forming a top electrode on the free layer;forming a hardmask layer on the top electrode; andetching the hardmask layer; the top electrode, the barrier layer, the pin layer, and the bottom electrode.