发明名称 |
Transparent conductive film |
摘要 |
A transparent conductive film comprises: a film substrate having two main surfaces; and a transparent conductor layer formed on one main surface of the film substrate. The transparent conductor layer is composed of three layers in which a first indium tin oxide layer, a second indium tin oxide layer, and a third indium tin oxide layer are laminated in this order from the film substrate side. The first indium tin oxide layer has a smaller tin oxide content than the second indium tin oxide layer has. The third indium tin oxide layer has a smaller tin oxide content than the second indium tin oxide layer has. |
申请公布号 |
US9142332(B2) |
申请公布日期 |
2015.09.22 |
申请号 |
US201214110196 |
申请日期 |
2012.10.01 |
申请人 |
NITTO DENKO CORPORATION |
发明人 |
Nashiki Tomotake;Noguchi Tomonori;Haishi Motoki;Ishibashi Kuniaki |
分类号 |
H01B5/14;B32B7/02;C23C14/08;C23C14/34;C23C14/58;G06F3/044;H01L31/0224;H01L31/18 |
主分类号 |
H01B5/14 |
代理机构 |
Westerman, Hattori, Daniels & Adrian, LLP |
代理人 |
Westerman, Hattori, Daniels & Adrian, LLP |
主权项 |
1. A transparent conductive film comprising:
a film substrate having two main surfaces; and a transparent conductor layer formed on one main surface of the film substrate, wherein the transparent conductor layer is composed of three layers in which a first indium tin oxide layer, a second indium tin oxide layer, and a third indium tin oxide layer are laminated in this order from the film substrate side, the first indium tin oxide layer has a smaller tin oxide content than the second indium tin oxide layer, and the third indium tin oxide layer has a smaller tin oxide content than the second indium tin oxide layer, and wherein the first indium tin oxide layer has a thickness smaller than the second indium tin oxide layer and the third indium tin oxide layer has a thickness smaller than the second indium tin oxide layer wherein the first indium tin oxide layer has a tin oxide content of 1% by weight to 5% by weight, the second indium tin oxide layer has a tin oxide content of 6% by weight to 15% by weight, and the third indium tin oxide layer has a tin oxide content of 1% by weight to 5% by weight. |
地址 |
Ibaraki-shi JP |