发明名称 Transparent conductive film
摘要 A transparent conductive film comprises: a film substrate having two main surfaces; and a transparent conductor layer formed on one main surface of the film substrate. The transparent conductor layer is composed of three layers in which a first indium tin oxide layer, a second indium tin oxide layer, and a third indium tin oxide layer are laminated in this order from the film substrate side. The first indium tin oxide layer has a smaller tin oxide content than the second indium tin oxide layer has. The third indium tin oxide layer has a smaller tin oxide content than the second indium tin oxide layer has.
申请公布号 US9142332(B2) 申请公布日期 2015.09.22
申请号 US201214110196 申请日期 2012.10.01
申请人 NITTO DENKO CORPORATION 发明人 Nashiki Tomotake;Noguchi Tomonori;Haishi Motoki;Ishibashi Kuniaki
分类号 H01B5/14;B32B7/02;C23C14/08;C23C14/34;C23C14/58;G06F3/044;H01L31/0224;H01L31/18 主分类号 H01B5/14
代理机构 Westerman, Hattori, Daniels & Adrian, LLP 代理人 Westerman, Hattori, Daniels & Adrian, LLP
主权项 1. A transparent conductive film comprising: a film substrate having two main surfaces; and a transparent conductor layer formed on one main surface of the film substrate, wherein the transparent conductor layer is composed of three layers in which a first indium tin oxide layer, a second indium tin oxide layer, and a third indium tin oxide layer are laminated in this order from the film substrate side, the first indium tin oxide layer has a smaller tin oxide content than the second indium tin oxide layer, and the third indium tin oxide layer has a smaller tin oxide content than the second indium tin oxide layer, and wherein the first indium tin oxide layer has a thickness smaller than the second indium tin oxide layer and the third indium tin oxide layer has a thickness smaller than the second indium tin oxide layer wherein the first indium tin oxide layer has a tin oxide content of 1% by weight to 5% by weight, the second indium tin oxide layer has a tin oxide content of 6% by weight to 15% by weight, and the third indium tin oxide layer has a tin oxide content of 1% by weight to 5% by weight.
地址 Ibaraki-shi JP