发明名称 |
Integrated circuit device and method for manufacturing same |
摘要 |
An integrated circuit device includes a plurality of fins on an upper surface of a semiconductor substrate and extending in a first direction, a device isolation insulating film placed between the fins, a gate electrode extending in a second direction crossing the first direction on the insulating film; and an insulating film insulating the fin from the gate electrode. In a first region where a plurality of the fins are consecutively arranged, an upper surface of the device isolation insulating film is located at a first position below an upper end of the fin. In a second region located in the second direction as viewed from the first region, the upper surface of the device isolation insulating film is located at a second position above the upper end of the fin. In the second region, the device isolation insulating film covers entirely a side surface of the fin. |
申请公布号 |
US9142537(B2) |
申请公布日期 |
2015.09.22 |
申请号 |
US201414484032 |
申请日期 |
2014.09.11 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
Sudo Gaku |
分类号 |
H01L27/12;H01L27/02;H01L21/8234;H01L27/088;H01L21/762;H01L21/02;H01L21/28;H01L27/22;H01L29/66;H01L29/78 |
主分类号 |
H01L27/12 |
代理机构 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. An integrated circuit device comprising:
a plurality of fins formed on an upper surface of a semiconductor substrate and extending in a first direction; a plurality of wide fins formed on the upper surface of the semiconductor substrate, extending in the first direction, and having a wider width than the fins; a device isolation insulating film placed between the fins and the wide fins; a gate electrode extending in a second direction crossing the first direction and provided on the device isolation insulating film; and an insulating film insulating the fins and the wide fins from the gate electrode, in a first region where a part of the fins are arranged, an upper surface of the device isolation insulating film being located at a first position below upper ends of the fins, and in a second region where the wide fins and an other part of the fins are arranged, the upper surface of the device isolation insulating film being located at a second position above the upper ends of the fins, and in the second region, the device isolation insulating film covering entirely a side surfaces of the other of the fins. |
地址 |
Minato-ku JP |