| 发明名称 |
Polysilicon thin film and manufacturing method thereof, array substrate and display device |
| 摘要 |
A polysilicon thin film and a manufacturing method thereof, an array substrate and a display device are disclosed. The manufacturing method of the polysilicon thin film comprises the following steps: forming a graphene layer and an amorphous silicon layer which are adjacent; forming polysilicon by way of crystallizing amorphous silicon so as to obtain the polysilicon thin film. The polysilicon thin film manufactured by the method possesses good characteristics. |
| 申请公布号 |
US9142409(B2) |
申请公布日期 |
2015.09.22 |
| 申请号 |
US201313963112 |
申请日期 |
2013.08.09 |
| 申请人 |
BOE Technology Group Co., Ltd. |
发明人 |
Sun Tuo |
| 分类号 |
H01L29/04;H01L21/02;H01L29/66;H01L29/786;H01L27/12 |
主分类号 |
H01L29/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A manufacturing method of a polysilicon thin film, comprising the following steps:
(A) forming a graphene layer and an amorphous silicon layer which are adjacent, wherein the graphene layer is a p-type graphene layer; (B) forming polysilicon by way of crystallizing amorphous silicon with the p-type graphene layer so as to obtain the polysilicon thin film. |
| 地址 |
Beijing CN |
