| 发明名称 | Resistance change type memory | ||
| 摘要 | According to one embodiment, a resistance change type memory includes a memory cell including a first resistance change element as a memory element; a reference cell including a second resistance change element and a first element having a resistance value which is not higher than a resistance range of the first and second resistance change elements; and a read circuit including a first input terminal connected to the memory cell, and a second input terminal connected to the reference cell. | ||
| 申请公布号 | US9142293(B2) | 申请公布日期 | 2015.09.22 |
| 申请号 | US201414198410 | 申请日期 | 2014.03.05 |
| 申请人 | KABUSHIKI KAISHA TOSHIBA | 发明人 | Hatsuda Kosuke |
| 分类号 | G11C11/00;G11C13/00;G11C11/16;G11C11/15;G11C11/14 | 主分类号 | G11C11/00 |
| 代理机构 | Holtz, Holtz, Goodman & Chick PC | 代理人 | Holtz, Holtz, Goodman & Chick PC |
| 主权项 | 1. A resistance change type memory comprising: a memory cell including a first resistance change element as a memory element; a reference cell including a second resistance change element including the same materials as the first resistance change element, and a first element, the first element having a resistance value which is not higher than a resistance range of the first and second resistance change elements; and a read circuit including a first input terminal connected to the memory cell, and a second input terminal connected to the reference cell; wherein the first element is a transistor. | ||
| 地址 | Tokyo JP | ||