发明名称 |
Termination for complementary signals |
摘要 |
Apparatuses including termination for complementary signals are described, along with methods for terminating complementary signals. One such apparatus includes a termination transistor including a first node configured to receive a first complementary signal and a second node configured to receive a second complementary signal. A regulation circuit can generate a regulated voltage to render the termination transistor conductive with a substantially constant resistance. In one such method, a first complementary signal is received at a drain of a termination transistor and a second complementary signal is received at a source of the termination transistor. Energy of the complimentary signals can be absorbed when the termination transistor is rendered conductive. Additional embodiments are also described. |
申请公布号 |
US9143132(B2) |
申请公布日期 |
2015.09.22 |
申请号 |
US201414174555 |
申请日期 |
2014.02.06 |
申请人 |
Micron Technology, Inc. |
发明人 |
Kammerer William;Kavalipurapu Kalyan |
分类号 |
H03K19/003;H03K19/0185;H04L25/02;H03K19/00;G11C16/04 |
主分类号 |
H03K19/003 |
代理机构 |
Schwegman Lundberg & Woessner, P.A. |
代理人 |
Schwegman Lundberg & Woessner, P.A. |
主权项 |
1. A memory device comprising:
an array of memory cells; and an input/output circuit, coupled to the array of memory cells, comprising:
a plurality of termination transistors coupled in parallel between first and second nodes, the first and second nodes each coupled to receive a respective signal that are substantially complementary to each other;a circuit to generate a regulated voltage; anda plurality of switches, each of the plurality of switches coupled between the circuit and a gate of a respective one of the termination transistors to selectively provide the regulated voltage to the gate of the respective termination transistor to render the respective termination transistor conductive with a substantially constant resistance. |
地址 |
Boise ID US |