发明名称 Termination for complementary signals
摘要 Apparatuses including termination for complementary signals are described, along with methods for terminating complementary signals. One such apparatus includes a termination transistor including a first node configured to receive a first complementary signal and a second node configured to receive a second complementary signal. A regulation circuit can generate a regulated voltage to render the termination transistor conductive with a substantially constant resistance. In one such method, a first complementary signal is received at a drain of a termination transistor and a second complementary signal is received at a source of the termination transistor. Energy of the complimentary signals can be absorbed when the termination transistor is rendered conductive. Additional embodiments are also described.
申请公布号 US9143132(B2) 申请公布日期 2015.09.22
申请号 US201414174555 申请日期 2014.02.06
申请人 Micron Technology, Inc. 发明人 Kammerer William;Kavalipurapu Kalyan
分类号 H03K19/003;H03K19/0185;H04L25/02;H03K19/00;G11C16/04 主分类号 H03K19/003
代理机构 Schwegman Lundberg & Woessner, P.A. 代理人 Schwegman Lundberg & Woessner, P.A.
主权项 1. A memory device comprising: an array of memory cells; and an input/output circuit, coupled to the array of memory cells, comprising: a plurality of termination transistors coupled in parallel between first and second nodes, the first and second nodes each coupled to receive a respective signal that are substantially complementary to each other;a circuit to generate a regulated voltage; anda plurality of switches, each of the plurality of switches coupled between the circuit and a gate of a respective one of the termination transistors to selectively provide the regulated voltage to the gate of the respective termination transistor to render the respective termination transistor conductive with a substantially constant resistance.
地址 Boise ID US