SYSTEMS AND METHODS OF FORMING A REDUCED CAPACITANCE DEVICE

摘要

A method includes forming an electronic device structure including a substrate, an oxide layer, and a first low-k layer. The method also includes forming openings by patterning the oxide layer, filling the openings with a conductive material to form conductive structures within the openings, and removing the oxide layer using the first low-k layer as an etch stop layer. The conductive structures contact the first low-k layer. Removing the oxide layer includes performing a chemical vapor etch process with respect to the oxide layer to form an etch byproduct and removing the etch byproduct. The method includes forming a second low-k layer using a deposition process that causes the second low-k layer to define one or more cavities. Each cavity is defined between a first conductive structure and an adjacent conductive structure, the first and second conductive structures have a spacing therebetween that is smaller than a threshold distance.

主权项

1. A method comprising:
forming an electronic device structure including a substrate, an oxide layer, and a first low-k layer; forming multiple openings in the electronic device structure by patterning the oxide layer; filling the openings with a conductive material to form multiple conductive structures within the openings, wherein the conductive structures contact the first low-k layer; after forming the conductive structures, removing the oxide layer using the first low-k layer as an etch stop layer, wherein removing the oxide layer comprises:
performing a chemical vapor etch process with respect to the oxide layer to form an etch byproduct; andremoving the etch byproduct; and after removing the oxide layer, forming a second low-k layer, wherein the second low-k layer is formed using a deposition process that causes the second low-k layer to define one or more cavities,
wherein each cavity of the one or more cavities is defined between a first conductive structure of the conductive structures and a second conductive structure of the conductive structures,wherein the first conductive structure is adjacent to the second conductive structure, andwherein a spacing between the first conductive structure and the second conductive structure is smaller than a threshold distance.