| 主权项 |
1. A semiconductor device having regions of first and second conductivity types that are opposite conductivity types, comprising:
a first semiconductor region of the second conductivity type between, in a first direction, a first electrode and a second electrode; a second semiconductor region of the first conductivity type between, in the first direction, the first semiconductor region and the second electrode; a third semiconductor region of the second conductivity type between, in the first direction, the second semiconductor region and the second electrode; a fourth semiconductor region of the first conductivity type between, in the first direction, the third semiconductor region and the second electrode; a fifth semiconductor region of the first conductivity type between, in the first direction, the third semiconductor region and the second electrode, the fourth and fifth semiconductor regions being adjacent to each other in a second direction that is perpendicular to the first direction, a dopant concentration in the fifth semiconductor region being less than a dopant concentration in the fourth semiconductor region; and a third electrode contacting the second semiconductor region, the third semiconductor region, the fourth semiconductor region, and the fifth semiconductor region via an insulating film. |
