| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING DEVICE, AND SEMICONDUCTOR DEVICE |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including a metal film having a necessary work function and oxidation resistance at low cost.SOLUTION: A method of manufacturing a semiconductor device includes a step for forming a metal containing film having a structure, obtained by repeatedly laminating a metal nitride film and a metal film, on an insulation film formed on the surface of a substrate by alternately repeating formation of the metal nitride film and formation of the metal film. The metal nitride film is constituted of a substance whose oxidation resistance is higher than in the metal film, the metal film is constituted of the substance having a work function which is higher than in the metal nitride film, and in a step for forming the metal containing film, the metal nitride film is formed first. |
| 申请公布号 |
JP2015165569(A) |
申请公布日期 |
2015.09.17 |
| 申请号 |
JP20150063473 |
申请日期 |
2015.03.25 |
| 申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
HORII SADAYOSHI;OGAWA ARITO;ITAYA HIDEJI |
| 分类号 |
H01L21/28;C23C16/34;C23C16/455;H01L21/285;H01L21/336;H01L21/822;H01L21/8242;H01L27/04;H01L27/108;H01L29/423;H01L29/49;H01L29/78 |
主分类号 |
H01L21/28 |
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