发明名称 CHIP-STACK INTERPOSER STRUCTURE INCLUDING PASSIVE DEVICE AND METHOD FOR FABRICATING THE SAME
摘要 A chip-stack interposer structure including a passive device is described, including an interposing layer, a capacitor, a first contact and a second contact. The capacitor is embedded in or disposed on the interposing layer, including a first electrode, a second electrode and a dielectric layer between the first and the second electrodes. The first contact is connected with the first electrode. The second contact is connected with the second electrode. The first electrode and the second electrode are disposed at the same side of the interposing layer or at different sides of the interposing layer.
申请公布号 US2015264813(A1) 申请公布日期 2015.09.17
申请号 US201414204898 申请日期 2014.03.11
申请人 United Microelectronics Corp. 发明人 Zhou Zhi-Biao;Wu Shao-Hui;Ku Chi-Fa
分类号 H05K1/18;H05K3/46;H05K1/02;H05K1/16;H05K1/11 主分类号 H05K1/18
代理机构 代理人
主权项 1. A chip-stack interposer structure including a passive device, comprising: an interposing layer; a capacitor, embedded in or disposed on the interposing layer, and comprising a first electrode, a second electrode, and a dielectric layer between the first electrode and the second electrode, wherein a portion of the first electrode does not overlap with the second electrode, and a portion of the second electrode does not overlap with the first electrode; a first contact, connected with the first electrode; and a second contact, connected with the second electrode, wherein the first contact and the second contact are disposed at the same side of the interposing layer.
地址 Hsinchu TW