发明名称 |
Contact-Independent Electrical Conductance Measurement |
摘要 |
Electrical conductance measurement system including a one-dimensional semiconducting channel, with electrical conductance sensitive to electrostatic fluctuations, in a circuit for measuring channel electrical current. An electrically-conductive element is disposed at a location at which the element is capacitively coupled to the channel; a midpoint of the element aligned with about a midpoint of the channel, and connected to first and second electrically-conductive contact pads that are together in a circuit connected to apply a changing voltage across the element. The electrically-conductive contact pads are laterally spaced from the midpoint of the element by a distance of at least about three times a screening length of the element, given in SI units as (K∈0/e2D(EF))1/2, where K is the static dielectric constant, ∈0 is the permittivity of free space, e is electron charge, and D(EF) is the density of states at the Fermi energy for the element. |
申请公布号 |
US2015260769(A1) |
申请公布日期 |
2015.09.17 |
申请号 |
US201213570556 |
申请日期 |
2012.08.09 |
申请人 |
Mentzel Tamar S.;MacLean Kenneth;Kastner Marc A.;Ray Nirat |
发明人 |
Mentzel Tamar S.;MacLean Kenneth;Kastner Marc A.;Ray Nirat |
分类号 |
G01R27/16;G01R19/00 |
主分类号 |
G01R27/16 |
代理机构 |
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代理人 |
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主权项 |
1. An electrical conductance measurement system comprising:
a one-dimensional semiconducting channel having an electrical conductance that is sensitive to electrostatic fluctuations in an environment of the channel, the semiconducting channel being provided in a circuit connected to measure electrical current through the channel; and an electrically-conductive element disposed at a location at which the element is capacitively coupled to the channel, with a midpoint of the element aligned with about a midpoint of the channel, the element being connected to a first electrically-conductive contact pad and a second electrically-conductive contact pad that are together in a circuit connected to apply a changing voltage across the element, each of the first and second electrically-conductive contact pads being laterally spaced from the midpoint of the element by a distance of at least about three times a screening length of the element, with the screening length given in SI units as (K∈0/e2D(EF))1/2, where K is the static dielectric constant, ∈0 is the permittivity of free space, e is the electron charge, and D(EF) is the density of states at the Fermi energy for the element. |
地址 |
Fair Lawn NJ US |