CMP-FRIENDLY COATINGS FOR PLANAR RECESSING OR REMOVING OF VARIABLE-HEIGHT LAYERS

摘要

An IC device manufacturing process effectuates a planar recessing of material that initially varies in height across a substrate. The method includes forming a polymer coating, CMP to form a planar surface, then plasma etching to effectuate a planar recessing of the polymer coating. The material can be recessed together with the polymer coating, or subsequently with the recessed polymer coating providing a mask. Any of the material above a certain height is removed. Structures that are substantially below that certain height can be protected from contamination and left intact. The polymer can be a photoresist. The polymer can be provided with suitable adhesion and uniformity for the CMP process through a two-step baking process and by exhausting the baking chamber from below the substrate.

主权项

1. A method of manufacturing an integrated circuit device, comprising:
processing a wafer through a series of operations to form a topographically variable layer of a material on the wafer, wherein the layer varies in height across the wafer; spin coating a monomer-containing solvent solution over a surface of the layer of the material; heating the wafer to within a first temperature range; maintaining the wafer within the first temperature range while the majority of the solvent evaporates from the solution; heating the wafer to within a second temperature range that is above the first temperature range; maintaining the wafer within the second temperature range until the monomers have polymerized to form a polymer coating and the polymers in the coating have cross-linked; chemically mechanically polishing to remove a first portion of the polymer coating; and etching to effectuate a top-down recessing of the polymer coating.