发明名称 |
PREDICTING LED PARAMETERS FROM ELECTROLUMINESCENT SEMICONDUCTOR WAFER TESTING |
摘要 |
A diode model and conductive-probe measurements taken at the wafer lever are used to predict the characterization parameters of a semiconductor device manufactured from the wafer. A current-voltage curve (I-V) model that expresses a current-voltage relationship as a function of resistance, ideality factor, and reverse saturation current is fitted to a number of conductive-probe measurement data. The current-voltage curve (I-Vd) for the device is then estimated by subtracting from the (I-V) model the product of current times the resistance produced by fitting the (I-V) model. |
申请公布号 |
US2015260782(A1) |
申请公布日期 |
2015.09.17 |
申请号 |
US201514726815 |
申请日期 |
2015.06.01 |
申请人 |
CHEN DONG |
发明人 |
CHEN DONG |
分类号 |
G01R31/26 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
1. A method of characterizing a semiconductor device from conductive-probe measurements performed on a semiconductor wafer from which the device is manufactured, said wafer including a p-type semiconductor layer and an n-type semiconductor layer defining a p-n junction, the method comprising the following steps:
applying electrical stimuli to the p-n junction through a probe in direct contact with one of said semiconductor layers to produce conductive-probe measurement data; fitting a current-voltage curve (I-V) model to said conductive-probe measurement data, said model expressing a current-voltage relationship as a function of resistance; and estimating a current-voltage curve (I-Vd) for the device by removing from the (I-V) model resistance effects calculated from data generated by the fitting step. |
地址 |
TUCSON AZ US |