NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

A non-volatile semiconductor memory device includes a memory cell array that includes a plurality of memory cells stacked on a semiconductor substrate, a voltage generating circuit that generates voltages for a memory cell selected for writing and for non-selected memory cells, and a control unit that controls the voltage generating circuit to supply the voltages to the memory cells. Normally, a write voltage is supplied to the selected memory cell, a first voltage lower than the write voltage to the memory cell adjacent to the selected memory cell, and a second voltage lower than the first voltage to the memory cell separated from the selected memory cell by one memory cell. However, if there are not enough memory cells between the selected memory cell and the semiconductor substrate, the second voltage is not supplied.

主权项

1. A non-volatile semiconductor memory device comprising:
a memory cell array that includes a plurality of memory cells stacked above a semiconductor substrate; a voltage generating circuit configured to generate voltages for a memory cell selected for writing and for non-selected memory cells; and a control circuit configured to control the voltage generating circuit to supply the voltages to the memory cells, wherein, if at least a first number of memory cells is between the selected memory cell and the semiconductor substrate, the control circuit applies a first rule, according to which the voltage generating circuit supplies a write voltage to the selected memory cell, a first voltage lower than the write voltage to non-selected memory cells adjacent to the selected memory cell, and a second voltage lower than the first voltage to non-selected memory cells separated from the selected memory cell by one non-selected memory cell, and wherein, if less than a second number of memory cells is between the selected memory cell and the semiconductor substrate, the control circuit applies a second rule, according to which the voltage generating circuit supplies the write voltage to the selected memory cell and the first voltage to the non-selected memory cells adjacent to the selected memory cell, but does not supply the second voltage to the non-selected memory cells separated from the selected memory cell by one non-selected memory cell.