METHODS AND CIRCUITS FOR GENERATING PHYSICALLY UNCLONABLE FUNCTION

摘要

Various embodiments include solutions for generating a physically unclonable function. In some cases, a method includes an electronic circuit including: a static random access memory (SRAM) device having at least one memory cell with at least one transistor device therein, SRAM bias temperature instability aging circuitry coupled with the SRAM device and configured to apply aging conditions to the at least one memory cell to degrade the at least one transistor device within the at least one memory cell, and at least one computing device coupled with the SRAM device and configured to: skew a storage cell value in the at least one transistor device, measure a skewed value of the storage cell after the skewing, and create a physically unclonable function from the skewed value of the storage cell.

主权项

1. An electronic circuit comprising:
a static random access memory (SRAM) device having at least one memory cell with at least one transistor device therein; SRAM bias temperature instability aging circuitry coupled with the SRAM device and configured to apply aging conditions to the at least one memory cell to degrade the at least one transistor device within the at least one memory cell; and at least one computing device coupled with the SRAM device and configured to:
skew a storage cell value in the at least one transistor device;measure a skewed value of the storage cell after the skewing; andcreate a physically unclonable function from the skewed value of the storage cell;deactivate a drain voltage power supply applied to the at least one transistor;set a programmable digital power source to equalize bit lines of the SRAM device at a predetermined drain voltage value;activate a word line in the SRAM device in response to the equalized bit lines;activate the drain voltage power supply applied to the at least one transistor; anddeactivate the word line before measuring an initial storage cell value.