发明名称 MAGNETIC SCANNING SYSTEM FOR ION IMPLANTERS
摘要 A compact electromagnetic system is disclosed that is capable of scanning an ion beam in two orthogonal directions (e.g., for semiconductor doping or hydrogen induced exfoliation). In particular, according to embodiments of the compact electromagnetic system, the steel yoke, pole pieces, and excitation coils for both the X and Y axis have been integrated into a common structure.
申请公布号 US2015262863(A1) 申请公布日期 2015.09.17
申请号 US201514657325 申请日期 2015.03.13
申请人 GTAT Corporation 发明人 Park William H.;Ryding Geoffrey
分类号 H01L21/762;H01J37/147;H01L29/32;H01J37/317 主分类号 H01L21/762
代理机构 代理人
主权项 1. A system for implanting ions into a target substrate, the system comprising: an ion beam generator configured to generate an ion beam toward a target substrate; an electromagnetic deflection system configured to scan the ion beam over the target substrate in two orthogonal directions, the electromagnetic deflection system consisting of a singular structure incorporating components to deflect the ion beam electromagnetically in each of the two orthogonal directions; and an ion beam controller configured to control the ion beam generation and scanning to implant ions into the target substrate.
地址 Merrimack NH US