| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
According to one embodiment, there is provided a semiconductor device, including a semiconductor substrate, a first semiconductor layer formed on a main surface of the semiconductor substrate, the first semiconductor layer containing carbon, a second semiconductor layer formed on the first semiconductor layer, the second semiconductor layer having impurities diffused, a groove part arranged so as to pass through the second semiconductor layer, and a gate electrode embedded in the groove part via a gate insulating film. |
| 申请公布号 |
US2015263067(A1) |
申请公布日期 |
2015.09.17 |
| 申请号 |
US201414453316 |
申请日期 |
2014.08.06 |
| 申请人 |
INABA Satoshi |
发明人 |
INABA Satoshi |
| 分类号 |
H01L27/22;H01L29/36;H01L29/51;H01L43/08;H01L21/02;H01L21/3065;H01L43/12;H01L43/02;H01L29/423;H01L29/66 |
主分类号 |
H01L27/22 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a semiconductor substrate; a first semiconductor layer formed on a main surface of the semiconductor substrate, the first semiconductor layer containing carbon; a second semiconductor layer formed on the first semiconductor layer, the second semiconductor layer containing impurities; a groove part arranged so as to pass through the second semiconductor layer; and a gate electrode embedded in the groove part via a gate insulating film. |
| 地址 |
Seongnam-si KR |
