| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME |
| 摘要 |
A semiconductor device includes a first pad region including a plurality of first storage nodes, a second pad region neighboring the first pad region and including a plurality of second storage nodes, a coupling portion disposed between the first pad region and the second pad region, and a plate electrode disposed over the plurality of first storage nodes of the first pad region and the plurality of second storage nodes of the second pad region, and disposed in the coupling portion to interconnect the first pad region and the second pad region. |
| 申请公布号 |
US2015262946(A1) |
申请公布日期 |
2015.09.17 |
| 申请号 |
US201414313963 |
申请日期 |
2014.06.24 |
| 申请人 |
SK HYNIX INC. |
发明人 |
KIM Jung Sam |
| 分类号 |
H01L23/00;H01L29/423;H01L27/088;H01L29/49 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first pad region including a plurality of first storage nodes; a second pad region neighboring the first pad region and including a plurality of second storage nodes; a coupling portion disposed between the first pad region and the second pad region; and a continuous plate electrode disposed over the plurality of first storage nodes of the first pad region, the plurality of second storage nodes of the second pad region, and the coupling portion. |
| 地址 |
Icheon KR |
