| 摘要 |
<p>According to the present invention, an apparatus for processing a substrate using plasma comprises a chamber, a gas providing part, upper and lower electrodes, a power providing part, a matching network, and a loss power measuring part. The chamber provides a process space where a processing process with respect to a substrate is performed by using plasma. The gas providing part provides process gas for the process space. The upper and lower electrodes are arranged to face each other while having the substrate therebetween, and an electric field is formed for forming plasma in the upper part of the substrate. The power providing part provides RF power for at least one between the upper electrode and the lower electrode. The matching network is electrically connected to at least one between the upper and lower electrodes, and the power providing part. The impedance of the RF power and impedance in plasma load inside the chamber are matched. The loss power measuring part is installed to be adjacent to an input terminal of the matching network, and measures leakage power lost in a step of providing the RF power output from the power providing part. Therefore, the present invention has effects of detecting RF power supply failure in real time, and more accurately identifying an RF power value provided for actual plasma formation by measuring loss power in an input terminal of the matching network.</p> |
