| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing deterioration of device characteristics resulting from doping with Fe.SOLUTION: A semiconductor device comprises: a semiconductor layer 26 made of a GaN doped with Fe; a first buffer layer 30 which is formed in contact with an upper surface of the semiconductor layer 26 and is made of an AlN or an AlGaN (0.4<x<1); and an operation layer which is formed on the first buffer layer 30 and is made of a GaN-based semiconductor 28.</p> |
