积体电路结构及其制造方法;INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR MANUFACTURING THEREOF

摘要

一种积体电路结构包含基板、低电压装置及高电压装置。低电压装置具有第一最短距离，由第一磊晶结构至相邻的闸堆叠；且高电压装置具有第二最短距离，从第二磊晶结构至相邻的闸堆叠。高电压装置的第二最短距离大于低电压装置的第一最短距离，因此在高电压操作下，可降低高电压装置的漏电流。此外，一种制造积体电路结构的方法亦揭露于此。; and the high voltage structure has a second beeline distance from a second epitaxial structure to an adjacent gate stack. The second beeline distance of the high voltage device is greater than the first beeline distance of the low voltage device, so that the leakage current in the high voltage device may be decreased under high voltage operation. Further, a method for manufacturing the integrated circuit structure also provides herein.