シリルアンチモン前駆体及びそれを用いた原子層堆積（ＡＬＤ）方法

摘要

The present invention is a process of making a germanium-antimony-tellurium alloy film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silylantimony precursor is used as a source of antimony for the alloy film. Silylantimony compounds are also disclosed.